Effect of Ultrathin Magnesium Layer on the Performance of Organic Light-Emitting Diodes
Organic light-emitting diodes (OLEDs) were fabricated with a structure of indium-tin-oxide (ITO)/poIystyrene(PS):N,N-bis-(3-naphthyl)-N,N-bip henyl-(l,l-biphenyl)-4,4-diamine(NPB)/tris-(8hydro-xyquinoline)-aluminum(Alq3)/Magnesium(Mg)/tris(8-hydroxyquinoline)-aluminum(Alq3)/Mg:Ag.By inserting an ultrathin Mg layer within an Alq3 layer, the electrical and luminescent properties were optimized.As a result, an optimized film thickness about 5nm of Mg layer was obtained.By analyzing the optical and electron transporting properties of OLEDs, electron mobility and trap characteristic energy were extracted based on space charge limited conduction (SCLC) and trapped charge limited conduction (TCLC) theories.
Electron mobility organic light- emitting diodes(OLEDs) trap characteristic energy ultrathin metallic layer
Wan Wang Hongjuan Zeng Qing Li Shuangjiang Yu
State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Optoelectronic Information and School of Life Science and Technology ,University of Electronic Science and Technology of China,Chengdu 610054,China
国际会议
成都
英文
321-324
2011-09-27(万方平台首次上网日期,不代表论文的发表时间)