Spectral Response of Metal-Semiconductor-Metal Photodetector Based on Black Silicon

摘要：

This paper reports the spectral responsivity of black silicon photodetector in a spectral range from 400 nm to 700 nm.According to the results, the responsivity of the detector annealed at temperature of 673 K by Rapid Thermal Annealing (RTA), is 58.8 AAV at 670 nm, which is nearly two orders of magnitude greater than the one without annealing treatment.Moreover, bias voltage plays another important role that greatly affects the spectral response of the photodetector.

关键词： Responsivity RTA bias voltage black silicon photodetector

作者: Y. J. Su Y. D. Jiang Z. M. Wu G. D. Zhao

作者单位: Department of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu,China

会议类型: 国际会议

会议名称: 2011 IEEE International Conference on Smart Grid and Clean Energy Technologies(2011 IEEE智能电网与清洁能源技术国际会议 ICSGCE2011)

会议地点: 成都

会议语种:英文

页码: 374-376

在线出版日期: 2011-09-27（万方平台首次上网日期，不代表论文的发表时间）