VDMOS Modeling for IC CAD
The VDMOS physical modeling method is studied, and then a VDMOS physical model is proposed for IC CAD. In this model, for the region whose cross-section area of electron flow is variable, a differential equation for the vertical electric field, which considers the high electric fields strong influence on the electron mobility, is established. Moreover, when the nonuniform electron concentration distribution is considered, this differential equation is solved by the analytical method. In addition, for the region whose cross-section area of electron flow is invariable, the analytical formula of vertical electric field is derived approximately by proper simplification. The calculation results show that in comparison to the Yeong-seuk Kim et als model, the calculation precision of this model is greatly improved. Especially when both the gate voltage and the drain voltage are high, its improvement is remarkable.
VDMOS modeling CAD differential equation electric field electron concentration
Jiaming Bao Haochen Qi Jian Zhang Yanke Zhang Zhiyan Hao
Dept, of Microelectronic, College of Information Engineering North China University of Technology Be School of Electronical Science and Applied Physics Hefei University of Technology Hefei, P, R, China
国际会议
重庆
英文
748-752
2011-08-20（万方平台首次上网日期，不代表论文的发表时间）