Laser-Induced Fluorescence of High-Purity Fused Silica Irradiated by ArF Excimer Laser
Elucidating the nature of light fluorescence of point defects in laser modified fused silica is important for controlling the evolution of laser damage and for designing an effective damage mitigation procedure in excimer laser applications. Laser-induced fluorescence (LIF) of high-purity irradiated by ArF excimer laser is studied experimentally. LIF bands of high-purity fused silica centered at 281nm, 478nm and 650nm are detected simultaneously. Furthermore, the dependence of intensities of LIF signals of the sample on laser power is presented. LIF signals show a squared dependence on power density, which indicates that laser-induced defects are formed mainly via two-photon absorption processes.
Laser-induced fluorescence fused silica laserinduced defects optical absorption
Haibo Zhang ZhijunYuan Jun Zhou Jingxing Dong Yunrong Wei Qihong Lou
Shanghai Key Laboratory of All Solid-state Laser and Applied Techniques Shanghai Institute of Optics and Fine Mechanics, CAS Shanghai, China
国际会议
2011 International Conference on Electronics and Optoelectronics(2011电子学与光电子学国际会议 ICEOE 2011)
大连
英文
21-24
2011-07-29(万方平台首次上网日期,不代表论文的发表时间)