会议专题

A Threshold Voltage Modeling for Ultra-Deep Sub-Micron MOSFETs

A threshold voltage modeling for ultra-deep submicron(UDSM) MOSFETs is given by the novel accuracy definition, which includes three parts: the first part is semiconductor surface potential, the second is the voltage on the gate oxide layer, and the third is named the flat-band voltage. In the modeling, the voltage on the gate oxide layer considers the effect of the channel charges and includes short-channel effects. By comparing with the model numerical analyzing and the characteristics simulating, the results of the simulation are basically identical with the designed model.

MOSFET threshold voltage UDSM surface potential work-function channel charges short-channel effects

LI Qing-long

School of Electronic Information & Electric Engineering, Changzhou Institute of Technology, 213002 Changzhou, China

国际会议

2011 International Conference on Electronics and Optoelectronics(2011电子学与光电子学国际会议 ICEOE 2011)

大连

英文

468-471

2011-07-29(万方平台首次上网日期,不代表论文的发表时间)