Research on the Peculiar Flashover Phenomenon of the PCSS in SF6

摘要：

Flashover severely restricts the development of the photoconductive semiconductor switch (PCSS) in highvoltage and high power. This paper reported the peculiar phenomenon that the current pulse, when the flashover occurred, was lower and wider than the normal value. Based on the photon-activated charge domain model and semiconductor flashover mechanism, the reason, the influence of secondary electron emission avalanche on the output wave, was analyzed. The dipole domain was imported to describe the critical state where the lower and wider current pulse occurred during the flashover.

关键词： PCSS flashover secondary electron emission avalanche photon-activated charge domain semi-insulating

作者: Wei Shi Zenggong Jiang Zhanglong Fu Mingqiang Wang

作者单位: Applied Physics Department, Xian University of Technology State Key Laboratory of Electrical Insula Applied Physics Department, Xian University of Technology

会议类型: 国际会议

会议名称: 2011 International Conference on Electronics and Optoelectronics(2011电子学与光电子学国际会议 ICEOE 2011)

会议地点: 大连

会议语种:英文

页码: 113-115

在线出版日期: 2011-07-29（万方平台首次上网日期，不代表论文的发表时间）