The Influence of Driving Current on Emission Spectra of GaN-Based LED

摘要：

The InGaN/GaN multiple quantum wells (MQWs) light emitting diodes (LEDs) were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The emission spetnim, chromaticity coordinates of the GaN-based blue LED have been measured under varied driving current. The results indicated that as the driving current increases from 1 mA to 20 mA, the peak wavelength of EL spetrum has slightly shifted toward short-wavelength (blue-shift) due to radiation recombination of the donor-acceptor pairs localized energy state in the InGaN well layer, the x value increases, but the y value decreases. When continuatively increasing forward current, a slowly red-shift of the emitting peak wavelength has been observed due to the temperature dependence of band-gap energy, the x value decreases, but the y value increases. The FWHM of EL spetrum increases as the driving current increases.

关键词： GaN LED driving current chromaticity coordinate

作者: Dongsheng Peng Ke Jin

作者单位: College of Optoelectronic Engineering,Shenzhen University Shenzhen, China, 518060 College of Optoelectronic Engineering, Shenzhen University Shenzhen, China, 518060

会议类型: 国际会议

会议名称: 2011 International Conference on Electronics and Optoelectronics(2011电子学与光电子学国际会议 ICEOE 2011)

会议地点: 大连

会议语种:英文

页码: 148-151

在线出版日期: 2011-07-29（万方平台首次上网日期，不代表论文的发表时间）