Molecular Dynamics Simulations of Femtosecond Laser Ablation of Silicon

摘要：

Molecular dynamics simulations were carried out to investigate the ablation process of silicon under irradiation of 266nm femtosecond laser. Evolutions of macro-variables were studied and final Profile and movement traces of atoms were obtained in Si(100) with laser intensity of 400GW/cm2. Characteristics of ablation processes of Si(100) and Si(lll) were compared. The amount of removal atoms and ablation depths were analyzed quantitatively in the two bulks with laser intensity of 400GW/cm2. Propagations of stress wave in the two bulks were also investigated.

关键词： molecular dynamics numerical simulations Laser Ablation, stress waves Silicon

作者: Li-Mei, WANG Xinwu ZENG

作者单位: College of Optoelectronic Engineering,National University of Defense Technology,Changsha, Hunan, Chi College of Optoelectronic Engineering,National University of Defense Technology,Changsha, Hunan, Chi

会议类型: 国际会议

会议名称: 2011 International Conference on Electronics and Optoelectronics(2011电子学与光电子学国际会议 ICEOE 2011)

会议地点: 大连

会议语种:英文

页码: 415-418

在线出版日期: 2011-07-29（万方平台首次上网日期，不代表论文的发表时间）