会议专题

Raman Scattering Characteristics of Mn-doped ZnO Films

The Raman scattering characteristics of the Zn1-χMn,O (x=l, 2, 3, and 5 at. %) thin films deposited by pulsed laser deposition were detailed studied. The Mn doped ZnO films had a perfect (002) orientation and presented ferromagnetism at room temperature. The magnetic moment per Mn ion decreased gradually with increasing Mn doping contents. Raman scattering showed that the vibration modes of the E2i (low) and E2 (high) had a close relation to the density of the defects. With increasing Mn doping, the increased grain size resulted in the decrease of full width at half maximum (FWHM) of E2 (low) mode, and also the phonon correlation region decreased due to the destroyed periodic crystal lattice of the films. Meanwhile, the diminishment of the density of oxygen vacancy made the FWHM of E2 (high) mode became narrow. The At (LO) mode was mainly affected by the fluctuation of electrical field induced by Mn ions doped into the ZnO films. The weakening of ferromagnetism was related to the increase of the disorder and to the diminishment of the defect density such as zinc vacancy and oxygen vacancy.

ZnO Mn doping Raman spectrum

Xiaoyun Teng Wei Yu Li Zhang Yanhua Wu Wei Gao Guangsheng Fu

College of Physics Science and Technology of Hebei University Postdoctoral Mobile Research Station o College of Physics Science and Technology of Hebei University Postdoctoral Mobile Research Station o College of Physics Science and Technology of Hebei University Postdoctoral MobileResearch Station of College of Physics Science andTechnology of Hebei University Postdoctoral Mobile Research Station of

国际会议

2011 International Conference on Electronics and Optoelectronics(2011电子学与光电子学国际会议 ICEOE 2011)

大连

英文

654-657

2011-07-29(万方平台首次上网日期,不代表论文的发表时间)