Optimization of 4H-SiC Separated-Absorption-Charge-Multiplication (SACM) Avalanche Photodiode with Low Avalanche Breakdown Voltage

摘要：

4H-SiC avalanche photodiode with a separated absorption region, a charge adjustment region and a multiplication region is proposed and its optoelectronic performance is modeled. By properly designing the doping concentration of each layer, the avalanche breakdown voltage and photo-response of the device is found to be dependent of the thickness of the multiplication region. The avalanche breakdown voltage shows a minimum and the photo-response shows a maximum at certain thickness of the multiplication region. The results are explained by the electric field distribution of the device and the impact ionization theory.

关键词： 4H-SiC avalanche photodiode

作者: Rongdun Hong Xiaping Chen Mingkun Zhang Zhengyun Wu Yi Zhou

作者单位: Physics and Mechanical & Electrical Engineering Xiamen University Xiamen, 361005, P.R. China Electrical Engineering Department University of California, Los Angeles Los Angeles, CA, 90095, USA

会议类型: 国际会议

会议名称: 2011 International Conference on Electronics and Optoelectronics(2011电子学与光电子学国际会议 ICEOE 2011)

会议地点: 大连

会议语种:英文

页码: 1181-1184

在线出版日期: 2011-07-29（万方平台首次上网日期，不代表论文的发表时间）