An Efficient Finite-element Method-based Stress Simulator for Integrated Circuit Optimization Designs
Dwindling feature size, pointed out the influence on performance of the pressure equipment and circuit integrated circuit (IC) can no longer be ignored. In fact, the pressure engineering is becoming more and more widely used in advanced IC manufacturing today processes to improve equipment performance. Introduce different stress on purpose to improve circuit performance, shallow trench - isolation (reference - the stress, it is venereal well applied device, active field is a by-product of the technological process and the influence of the circuit has become increasingly apparent behavior. This paper proposes a new kind of influence of whole process to characterize performance, without the stress on the rf/analog circuit layout and processing by considering detailed information. An accurate and efficient finite element stress simulator developed a method extracting based on the stress distribution of integrated circuit from layout design. The existing MOSFET model to capture the effect also can increase of stress on the liquidity, threshold voltage. In order to enhance model, we can study the pressure without the influence of layout - dependent, in the real circuit performance optimization and establish corresponding strategies. This process has been used in a series of rf/analog integrated circuit design is based on a 90 - nm CMOS process produced.
Finite-element Method Integrated Circuit Optimization Designs simulation stress
ZHANG Hong-bin Liu Zhi-ming
Chongqing College of Electronic Engineering Chongqing,China, 401331
国际会议
海口
英文
57-60
2011-07-15（万方平台首次上网日期，不代表论文的发表时间）