Growth of InAs quantum wires with Ga-assisted deoxidation on cleaved-edge GaAs (110) surface

摘要：

We have fabricated site-controlled InAs quantum wires (QWRs) on the cleaved surface (110) of AlGaAs/GaAs superlattices (SLs) structures by using Ga-assisted deoxidation method.In the surface of SLs regions, InAs QWRs were nucleated on GaAs in stead of AlGaAs.In the (110) surface without superlattices (SLs) structures, QDs with a large size were obtained, which is considered hard to realize.To understand the different InAs growth phenomena in the regions with and without superlattices structures, we suggest that indium adatoms have an apparent trend to migrate to the SLs area.

关键词： Ga-assisted deoxidation quantum wires cleaved-edge overgrowth

作者: Liu Jian-Qing Chen Yong-Hai Xu Bo Wang Zhan-Guo

作者单位: Sanan Optoelectronic Co.,Ltd,1721-1725 Luling Road .Xiamen,Fujian,China Key Laboratory of Semiconductor Material Science,Institute of Semiconductors,Chinese Academy of Scie

会议类型: 国际会议

会议名称: 2011 2nd International Conference on Material and Manufacturing Technology(2011第二届材料与制造技术国际会议 ICMMT2011)

会议地点: 厦门

会议语种:英文

页码: 73-76

在线出版日期: 2011-07-08（万方平台首次上网日期，不代表论文的发表时间）