Smooth GaAs (110) surface fabrication using the Ga-assisted deoxidation method

摘要：

We have practiced the Ga-assisted deoxidation method on GaAs(l 10) surface.When the deposit amount of Ga is suitable, flat GaAs(110) surface without any thermal deoxidation induced pits and excrescent GaAs islands obtained with the Ga-assisted deoxidation method.The obtained results suggested that, 9ML Ga was optimized dose for GaAs(110) surface, which is a little more than GaAs(001) surface indicating a thicker oxide layer of GaAs(l 10) surface.

关键词： Ga-assisted deoxidation GaAs(110) cleaved-edge overgrowth

作者: Liu Jian-Qing Chen Yong-Hai Xu Bo Wang Zhan-Guo

作者单位: Sanan Optoelectronic Co.,Ltd,1721-1725 Luling Road ,Xiamen,Fujian,China. Key Laboratory of Semiconductor Material Science,Institute of Semiconductors,Chinese Academy of Scie Key Laboratory of Semiconductor Material Science,Institute of emiconductors,Chinese Academy of Scien

会议类型: 国际会议

会议名称: 2011 2nd International Conference on Material and Manufacturing Technology(2011第二届材料与制造技术国际会议 ICMMT2011)

会议地点: 厦门

会议语种:英文

页码: 138-141

在线出版日期: 2011-07-08（万方平台首次上网日期，不代表论文的发表时间）