Effect of Annealing Atmosphere on the Mg2Si Film Growth Deposited by Magnetron Sputtering

摘要：

Semiconducting Mg2Si films were fabricated on Si (111) substrates by magnetron sputtering and subsequent annealing, and the effects of annealing atmosphere on the Mg2Si film growth were studied. The structural and morphological properties of Mg2Si films were investigated by the means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results showed that annealing atmosphere was an important factor that affected the growth of Mg2Si thin films, and vacuum annealing was not suitable for preparing Mg2Si thin films. Only Si (111) substrate diffraction peaks were observed, and no Mg2Si diffraction peak was observed when the first six Mg/Si samples were annealed under vacuum annealing condition. However, many Mg2Si diffraction peaks were observed besides the Si substrate diffraction peaks when the second six Mg/Si samples were annealed under Ar gas atmosphere. In addition, compact and smooth Mg2Si thin films annealed under Ar gas atmosphere were obtained.

关键词： Mg2Si film magnetron sputtering annealing atmosphere X-ray diffraction scanning electron microscopy

作者: Qing-Quan Xiao Quan Xie Ke-Jie Zhao Zhi-Qiang Yu

作者单位: Institute of Advanced Optoelectronic Materials and Technology,College of Science,Guizhou University,Guiyang 550025,P.R.China

会议类型: 国际会议

会议名称: 2010 International Conference on Material and Manufacturing Technology(2010材料与制造技术国际会议 ICMMT2010)

会议地点: 重庆

会议语种:英文

页码: 290-294

在线出版日期: 2010-09-17（万方平台首次上网日期，不代表论文的发表时间）