Field Emission of Aluminum Nitride Nanocones Deposited on Titanium Substrate
We report the preparation of quasi-arrays of aluminum nitride nanocones via chemical vapor deposition on nitriding treated titanium substrate at 800 ℃ through the reaction between AlCl3 vapor and NH3/N2 gas. The field emission measurement exhibits a fine electron emission with the turn-on field of 10.7 V/mm, which is quite smaller than the turn-on field of 41.3 V/μm for aluminum nitride nanocones deposited on silicon wafer in our previous works. The reduction of turn-on field is attributed to the formation of a layer of conductive tiannium nitride on titanium substrate during the nitriding treatment.
field emission aluminum nitride nanocone titanium substrate
Yemin Hu Zheng Hu Fan Zhang Ying Li Mingyuan Zhu Shiwei Wang
School of Materials Science and Engineering,Shanghai University,Shanghai 200072,P.R.China Key Laboratory of Mesoscopic Chemistry of MOE and Jiangsu Provincial Lab for NanoTechnology,School o
国际会议
2010 International Conference on Material and Manufacturing Technology(2010材料与制造技术国际会议 ICMMT2010)
重庆
英文
476-481
2010-09-17(万方平台首次上网日期,不代表论文的发表时间)