Analyses of CMP Mechanism of NiP Substrate of Computer Hard-disk with Alkali Slurry

摘要：

In this paper, the chemical character of NiP substrate of computer disk is analyzed, the CMP kinetics processing is discussed to indicate that the chemical reaction is the slowest and the control process. By analyzing essentiality of slurry on NiP film CMP, it is indicated that the chemical component of slurry acts the important role in CMP. New type of alkali slurry for NiP substrate was prepared and its CMP mechanism is studied with alkali slurry. Strong complexation of complex agent improved selectivity of concave area and convex area to get higher removal rate. Low roughness is realized with small size and low hardness silica sol as abrasive.

关键词： Hard-disk Substrate Alkali CMP Slurry Mechnism Removal rate Roughness

作者: Baimei Tan Xinhuan Niu Na Bian Huanhuan Zhou Yuling Liu

作者单位: Institute of Microelectronics,Hebei University of Technology,Tianjin,China

会议类型: 国际会议

会议名称: 2010 International Conference on Material and Manufacturing Technology(2010材料与制造技术国际会议 ICMMT2010)

会议地点: 重庆

会议语种:英文

页码: 580-583

在线出版日期: 2010-09-17（万方平台首次上网日期，不代表论文的发表时间）