Study on Optimization of CMP Slurry for Tantalum in ULSI Based on Taguchi Method

摘要：

Chemical mechanical polishing (CMP) has become an essential technique in advanced ULSI process. The mechanism of Ta CMP is discussed in this paper. According to the physical and chemical properties of Ta, the alkaline polishing slurry and proper process parameters for Ta CMP are prepared. The paper optimized four key parameters-abrasive concentration, organic alkali, oxidant and surfactant concentration, obtained the comprehensive optimized slurry used in evaluating the removal rate using Taguchi method. The results indicate that: abrasive concentration is 10％, the organic alkali concentration is 15ml/L, the oxidant concentration is 10ml/L and the surfactant concentration is lOml/L, higher removal rate can be obtained.

关键词： Tantalum Chemical mechanical polishing (CMP) Slurry Removal rate Taguchi method

作者: Mu Huilai Wang Shengli Li Zhenxia Xu Wenzhong Xiang Xia

作者单位: School of Information Engineering,Hebei University of Technology,Tianjin 300130,China Hebei University of Technology,Tianjin 300401,China

会议类型: 国际会议

会议名称: 2010 International Conference on Material and Manufacturing Technology(2010材料与制造技术国际会议 ICMMT2010)

会议地点: 重庆

会议语种:英文

页码: 794-798

在线出版日期: 2010-09-17（万方平台首次上网日期，不代表论文的发表时间）