A NEW METHOD FOR EXTRACTING PARAMETERS OF SILICON PHOTOVOLTAIC MODULES
The paper put forward a new method for extracting parameters of silicon photovoltaic (PV) modules. Some values under the Standard Test Conditions of silicon PV modules could be provided by PV module manufacturers. By using simplified four-parameter PV mathematical model, I-V curves of the PV model can be achieved. Depending on the I-V curves, the values of dV/dl at V=0 and dV/dl at 1=0 can be achieved by using piecewise fitting method, which are necessary in using five-parameter PV mathematical model. Then five parameters of PV five-parameter mathematical model including serial resistance Rs, shunt resistance Rsh, photocurrent Iph, and reverse saturation current 10 and diode ideality factor n could be computed. The method solves the problem that the values of dV/dl at V=0 and dV/dl at 1=0 in fiveparameter PV model cant be provided by manufacturers directly, and provides a convenient and feasible method to obtain the PV modules performance curve accurately. Experiment results demonstrated that the method has high accuracy.
PV modules performance simulation five-parameter method four-parameter method
Hao Yuzhe Bai Jianbo Zhang Zhen Jiang Meng
College of Mechanical and Electrical Engineering, Hohai University.Jiangsu, Changzhou, China State K College of Mechanical and Electrical Engineering, Hohai University.Jiangsu, Changzhou, China State Key Laboratory of Photovoltaic Science and Technology. Jiangsu, Changzhou, China
国际会议
大连
英文
18
2012-05-28（万方平台首次上网日期，不代表论文的发表时间）