Thermal Rectification and Phonon Scattering in Silicon with Cone Cavity
The thermal rectification is an interesting phenomenon in heat transfer field and it has significant potential application in improving the thermal management of electronics and energy conservation. Understanding the thermal rectification mechanism is very necessary and important. In this paper the thermal rectification in silicon with cone cavity is investigated by the non-equilibrium molecular dynamics simulation. Results indicate that the magnitude of the thermal resistance caused by the cone cavity is about 10-10m2KW-1. When the heat flux direction is changed, the cone cavity thermal resistance differs averagely by about 11％ from 300 K to 1100 K. The phonon wave packet dynamic simulation method is also used to obtain the longitudinal phonon scattering property at the cone cavity with different frequency. Results indicate that the transverse phonons are generated during the scattering and the phonon transmission coefficient varies little with the frequency. When the phonon transport direction is reversed, the average transmission coefficient is changed by about 14％ in all the frequency range, which can be considered as the main reason for the thermal rectification in silicon with cone cavity. For the cone cavity with different heights, the thermal resistance with the heat flux from the bottom to the peak of the cone cavity is all larger than the reversed direction.
Thermal rectification Phonon scattering Silicon Cone cavity
Shenghong Ju Xingang Liang
Department of Engineering Mechanics, Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Tsinghua University, Beijing, 100084, China
国际会议
4th International Symposium on Heat Transfer and Energy Conservation(第四届传热与节能国际研讨会 ISHTEC2012)
广州
英文
1-5
2012-01-06（万方平台首次上网日期，不代表论文的发表时间）