Study of the noninverting amplifier based on memristor with linear dopant drift

摘要：

According to the HP memristor model with linear dopant drift, the electrical characteristics of memristor are analyzed. Then, the transmission characteristics of memristor based noninverting op amplifier are investigated. The theoretical results are well demonstrated by the SPICE circuit simulation with a published memristor subcircuit with linear dopant drift.

关键词： Memristor Op amplifier SPICE Linear dopant drift

作者: Qingjiang Li Hui Xu Haijun Liu Xiaobo Tian

作者单位: National University of Defense Technology,Changsha, CO 410073 China

会议类型: 国际会议

会议名称: 2012 International Conference on Intelligent System Design and Engineering Applications(2012年智能系统设计与工程应用国际会议 ISDEA 2012)

会议地点: 三亚

会议语种:英文

页码: 1136-1139

在线出版日期: 2012-01-06（万方平台首次上网日期，不代表论文的发表时间）