NV-DICE: A Ferroelectric Nonvolatile DICE Storage Element for Tolerance to Single Event Upsets

摘要：

This paper proposes a new nonvolatile Dual Interlocked Cell (NV-DICE) storage element. The cell includes a DICE latch and four backup ferroelectric capacitors. It can perform store automatically when the power is off abruptly and has high tolerance to SEU. READ and WRITE operations in this cell were simulated by HSIM. Single Event Upset (SEU) of the cell were simulated by Sentaurus simulation tools at 0.13m feature size. The developed NV-DICE can be applied to nonvolatile FPGA and standard ASICs which require high tolerance to SEU.

关键词： Nonvolatile DICE Ferroelectric Capacitors SEU

作者: Zhai Ya-Hong Li Wei Li Ping Hu Bin Gu Ke Fan Xue

作者单位: State key Laboratory of Electric Thin Films and Integrated Devices University of Electronic Science State key Laboratory of Electric Thin Films and Integrated Devices University of Electronic Science

会议类型: 国际会议

会议名称: 2012 International Conference on Intelligent System Design and Engineering Applications(2012年智能系统设计与工程应用国际会议 ISDEA 2012)

会议地点: 三亚

会议语种:英文

页码: 1281-1284

在线出版日期: 2012-01-06（万方平台首次上网日期，不代表论文的发表时间）