Research on PMnN-PZT Ferroelectric Thin Films on Silicon Substrates

摘要：

The PZT-based ferroelectric thin films own excellent properties, such as good ferroelectricity and excellent piezoelectricity, and the ternary compound PZT-based thin films especially own more excellent properties, which are available to be widely applied in the fabrications of electromechanical devices. However, how to deposit multi-composition PZT-based thin films is a difficult technology. In this paper, the Pb(Mn1/3,Nb2/3)O3-PbZrO3- PbTiO3((PMnN-PZT)) ternary compound thin films are studied on, The thin films are deposited on Si substrates by the magnetron sputtering method, in which the same ratio of PZ/PT= 52:48(PZT(52/48)) and the heterostructure substrates of SrRuO3(SRO)/Pt(111)/Ti /SiO2/Si(100) are adopted, and the quench method is always used after the depositions for the post heat treatments. The lattice structures, the surface and the ferroelectricity of thin films are characterized. The results show that the doping of PMnN with 6％ mol percent is proper to obtain excellent PMnN-PZT ferroelectric thin films, and the doping of PMnN effectively improve the ferroelectricity of PZT thin films.

关键词： Fabrication and Characterization Thin film PZT Ternary Compound

作者: Tao Zhang Hongwei Ma Min Li Baihong Li Ping Liu

作者单位: College of Science, Xian University of Science and Technology, Xian 710054, China College of Mechanical Engineering, Xian University of Science and Technology, Xian 710054,China

会议类型: 国际会议

会议名称: 2011 International Conference on Mechatronics and Applied Mechanics(2011年机电一体化与应用力学国际会议 ICMAM 2011)

会议地点: 香港

会议语种:英文

页码: 241-244

在线出版日期: 2011-12-27（万方平台首次上网日期，不代表论文的发表时间）