ELECTRICAL PROPERTIES OF (BI4.0-X, NDX)(TI2.95V0.05)O12 THIN FILMS WITH DIFFERENT ND-CONTENT
Ferroelectric thin films of Nd3+/V5+-cosubstituted bismuth titanate, i.e., (Bi4.0-x, Ndx)(Ti2.95V0.05) O12 (x = 0, 0.25 and 0.5), were fabricated on Pt( 111). Electrical properties of these ferroelectric thin films were investigated using polarization hysteresis loops, leakage current-voltage, and fatigue characteristics. An optimum Nd-content was identified to increase polarization. In contrast, an abundant or insufficient Nd-content could have negative effects. No fatigue phenomenon was observed up to ~ 10 switching cycles and the leakage current of the film (x =0.5) was kept below 109 A at a sweeping voltage less than 5 V. Dependence of remanent polarization (2PT) on the frequency, in the range from 0 to 10 kHz, was also investigated. These findings suggest great impact for high-density FeRAM applications.
Ferroelectric thin film Electrical properties BTV BNTV
Feng YANG Ming-hua TANG
School of Materials Science and Engineering, University of Jinan, Jinan 250022, China Faculty of material & Optoelectronic physics, Xiangtan University, Hunan, 411105, China Key Laborato
国际会议
深圳
英文
98-101
2011-12-09（万方平台首次上网日期，不代表论文的发表时间）