Growth and Characterization of Radial pn Junction GaAs Nanowire by MOCVD

摘要：

Radial pn-junction GaAs nanowires were fabricated and investigated in detail. These nanowires were grown on GaAs (111)B substrate by metal-organic chemical vapor deposition via Au-catalyzed vapor-liquid-solid mechanism. Two types of nanowire p-n junctions were fabricated by growing a n(p)-doped GaAs shell outside a p(n) GaAs core. P-type doping was provided by diethyl zinc, while silane was introduced for n-type doping. The morphology, crystal structure and doping characteristics were investigated by FESEM, TEM and EDS. The results showed that both the two structures were of good morphology and both dopants were successfully incorporated into the nanowires.

关键词： GaAs nanowire radial pn-junction MOCVD high p-type doping level

作者: Yue Song Xin Yan Xia Zhang Xiaolong Lv Junshuai Li Yongqing Huang Xiaomin Ren

作者单位: State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications, Beijing, 100876, China

会议类型: 国际会议

会议名称: 2011 International Conference on Advanced Materials and Engineering Materials(2011先进材料与工程材料国际会议 ICAMEM 2011)

会议地点: 沈阳

会议语种:英文

页码: 165-169

在线出版日期: 2011-11-22（万方平台首次上网日期，不代表论文的发表时间）