Factorial Experiment Study on Deposition Parameter Dependence of The Energy Bandgap of a-SiGe:H Thin Film Prepared by Plasma Enhanced Chemical Vapor Deposition
The energy bandgap (Eg) of a-SiGe:H thin film prepared by plasma enhanced chemical vapor deposition (PECVD) is greatly dependent on the deposition conditions. By controlling the flow rates of the supplied gas sources, the total gas pressure, the plasma power, the substrate temperature and so on, Eg can be adjusted. Although the influence of the above deposition factors has been investigated individually, which factor is the most important is still not clear. Here, a 6-factor 5-level factorial experiment was designed to investigate the influence of the deposition factors comprehensively. By making the main effect analysis to Eg, not only the influence of each deposition factor was deduced, but also the most critical factors were selected out. It was found that the flow rates of SiH4 and GeH4, and the total gas pressure played the important roles for the Eg adjustment of a-SiGe:H thin film. So much attention can be only paid to optimize such critical factors with other factors as some default values according to the experience. Thus, the work load can be reduced greatly.
Factorial experiment a-SiGe:H Energy bandgap PECVD
Lei Zhao Baojun Yan Bending Zhao Hongwei Diao Wenjing Wang
Key Laboratory of Solar Thermal Energy and Photovoltaic System of Chinese Academy of Sciences, Insti Key Laboratory of Solar Thermal Energy and Photovoltaic System of Chinese Academy of Sciences, Insti Key Laboratory of Solar Thermal Energy and Photovoltaic System of Chinese Academy ofSciences, Instit
国际会议
沈阳
英文
663-667
2011-11-22（万方平台首次上网日期，不代表论文的发表时间）