The design method of optimum Field-Plate structure for HEMTs

摘要：

This paper investigated on the optimization design of the AlGaN/GaN High electron mobility transistors (HEMT) with gate terminal field-plate (FPs) structure and proposed an optimization method at a given work conditions, such as drain bias Vd . Though the simulation, we obtain two fitting formula about the FPs thickness tox and the minimum length lmin.

关键词： AlGaN/GaN-based HEMT field-plate simulation

作者: Wei Zhou Jie Wu Xiang Li Jie Yang Su Jing Xia Tang Wu

作者单位: State Key Lab. of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

会议类型: 国际会议

会议名称: 2011 International Conference on Advanced Materials and Engineering Materials(2011先进材料与工程材料国际会议 ICAMEM 2011)

会议地点: 沈阳

会议语种:英文

页码: 1387-1390

在线出版日期: 2011-11-22（万方平台首次上网日期，不代表论文的发表时间）