Microscopic study on the carrier distribution in optoelectronic device structures: experiment and modeling
(0) Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) both are capable of mapping the 2-demensional carrier distribution in semiconductor device structures, which is essential in determining their electrical and optoelectronic performances. In this work, cross-sectional SCM1 is used to study the InGaAs/InP P-i- N junctions prepared by area-selective p-type diffusion. The diffusion lengths in the depth as well as the lateral directions are obtained for junctions under different window sizes in mask, which imply that narrow windows may result in shallow p-n junctions. The analysis is beneficial to design and fabricate focal plane array of near infrared photodetectors with high duty-cycle and quantum efficiency. On the other hand, SSRM provides unparalleled spatial resolution (<10 nm) in electrical characterization2 that is demanded for studying low-dimensional structures. However, to derive the carrier density from the measured local conductance in individual quantum structures, reliable model for SSRM is necessary but still not well established. Based on the carrier concentration related transport mechanisms, i.e. thermionic emission and thermionic field emission3,4, we developed a numerical model for the tip-sample Schottky contact3. The calculation is confronted with SSRM study on the dose-calibrated quantum wells (QWs).
carrier distribution scanning capacitance microscopy scanning spreading resistance microscopy photodetector slective-area diffusion quantum wells
Wenchao Huang Hui Xia Shaowei Wang Honghai Deng Peng Wei Lu li Fengqi Liu Zhifeng Li Tianxin Li
National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Scien Detective Assembly Technology Department, Shanghai Institute of Technical Physics,Chinese Academy of Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sc
国际会议
上海
英文
1-3
2011-11-13（万方平台首次上网日期，不代表论文的发表时间）