Improve the negative-voltage ESD characteristics of blue LEDs using an extended n-electrode

摘要：

We developed light-emitting diodes (LEDs) having a shunt diode in order to improve their negative-voltage electrostatic discharge (ESD) characteristics. To make the discharge path, the n-electrode of the LED was extended over a p-GaN surface. The negative-voltage ESD threshold of the LED with an additional diode was significantly increased from 300–500 V to 3000 V.

关键词： light-emitting diodes negative-voltage electrostatic discharge Schottky contact extended n-electrode

作者: Sang-Mook Kim Kwang Cheol Lee Ahn Su Chang Eunmi You Jong Hyeob Baek

作者单位: Korea Photonics Technology Institute (KOPTI), Gwangju 500-460, Korea

会议类型: 国际会议

会议名称: 2011亚洲光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-3

在线出版日期: 2011-11-13（万方平台首次上网日期，不代表论文的发表时间）