GaAs Nanowires Fabricated Using Colloidal Lithography and Dry Etching

摘要：

A method for the fabrication of large-area well-ordered periodic GaAs nanowires have been developed based on colloidal lithography and a two-step inductively coupled plasma (ICP) etching. The reflectance spectra of the GaAs nanowire samples are measured and compared with nanowires fabricated by using molecular beam epitaxy.

关键词： Nanowire colloidal lithography spin-coating GaAs solar cell

作者: Ke Chen Mingyu Li Jian-Jun He Ray LaPierre

作者单位: Center for Integrated Optoelectronics, State Key Laboratory of Modern Optical Instrumentation, Zheji Department of Engineering Physics, McMaster University, Hamilton, ON, L8S 4L7, Canada Author 1 is a

会议类型: 国际会议

会议名称: 2011亚洲光纤通信与光电国际会议

会议地点: 上海

会议语种:英文

页码: 1-3

在线出版日期: 2011-11-13（万方平台首次上网日期，不代表论文的发表时间）