ZnO Thin-Film Transistor with Boron-Implanted Source/Drain Regions

摘要：

Because of the rapid diffusion of hydrogen in zinc oxide even at a relatively low temperature, zincoxide based thin-film transistors with hydrogen-doped source/drain regions suffer from degraded thermal stability. The use and effective of boron, a heavier and a more slowly-diffusing dopant, is systematically investigated as a replacement of hydrogen. Selfaligned, top-gated zinc-oxide thin-film transistors with source/drain regions doped with implanted boron is shown to be much more thermally stable, even when subjected to the relatively high temperature needed for the formation of a good-quality passivation layer.

关键词： Boron implantation thin-film transistor transparent electronics zinc oxide

作者: Z. Ye L. Lu M. Wong

作者单位: The Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China

会议类型: 国际会议

会议名称: China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)

会议地点: 江苏昆山

会议语种:英文

页码: 21-24

在线出版日期: 2011-11-07（万方平台首次上网日期，不代表论文的发表时间）