Ultrathin a-IGZO TFTs with High Performance
We have fabricated high-performance thin-film transistors (TFTs) incorporating 5-nm-thick amorphous-indium-gallium-zinc-oxide (a-IGZO) active layers on glass substrates. The ultrathin a-IGZO TFTs employ the bottom-gate inverted staggered structure with SiO2 gate-insulators and back-channel passivation (etch-stopper). The etch-stopper in selfaligned by back-surface UV exposure. TFTs with respective channel width W and length L of 20 and 15 μm are characterized by a depletion mode of operation with turnon voltage VOn of~－5 V and field-effect mobility μfe, of ~30 cm2/V.s. The high μfe is attributed to reduced spreading resistance at the source and drain sides, owing to the thinness of the active-layer. The threshold-voltage shift (ΔVth) under positive gate bias-stress is negligible. Good thermal and electrical stability is attributed to a low density of defects in the bulk a-IGZO and at the a-IGZO/SiO2 interfaces. The self-aligned etch-stopper reduces the gate-to-drain overlap capacitance CGd, resulting in fast TFT circuits.
amorphous-indium-gallium-zinc-oxide (a-IGZO) ring-oscillator thin-film transistor (TFT) ultrathin
M. Mativenga H. M. Kim D. Geng M. J. Seok J. Jang
Advanced Display Research Center, Kyung Hee Univiversity, 1 Hoegi-dong, Dongdaemun-gu,Seoul 130-701, Korea
国际会议
China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)
江苏昆山
英文
28-31
2011-11-07（万方平台首次上网日期，不代表论文的发表时间）