Source-gated transistors for improved current-mode pixel drivers
Emissive displays require high-efficiency linear drivers which are stable under electrical stress and can deliver uniform performance across a large area. Owing to their low saturation voltage and flat saturation characteristic, source-gated transistors (SGTs) are ideally suited to act as power-efficient driving transistors in active matrix backplanes for lighting, low-power signage and display screens. It is shown that SGTs are also very stable during electrical stress. The technology is compatible with standard TFT fabrication allowing FET and SGT devices to be integrated in the same design and fabrication run.
thin-film transistor source-gated transistor pixel driver low power time stress stability intrinsic gain
R. A. Sporea J. M. Shannon S. R. P. Silva X. Guo
Advanced Technology Institute, University of Surrey, Guildford, Surrey, GU2 7XH, U.K Displays and Lighting Centre, Shanghai Jiao Tong University, Shanghai, 200240, China
国际会议
China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)
江苏昆山
英文
32-35
2011-11-07（万方平台首次上网日期，不代表论文的发表时间）