Large Scale PECVD Systems for Low Temperature Polysilicon Based Display Applications

摘要：

LTPS (especially OLED) needs better uniformity in both film thickness and film properties for PECVD deposition. The AKT-20KPX PECVD systems can deposit a range of single-layer or in-situ multi-layer films of amorphous silicon (a-Si), silicon nitride (SiNx), SiH4 based and TEOS based silicon oxide (SiOx). The Hollow Cathode Gradient (HCG) diffuser technology equalizes plasma density distribution across the entire large-area substrate, enabling less than 5％ variation in film thickness and excellent film property uniformity. This technology also allows for higher deposition rate films and high gas utilization.

关键词： PECVD LTPS OLED a-Si precursor gate insulator ILD amorphous silicon silicon oxide silicon nitride TEOS oxide

作者: Qunhua Wang John White Weijie Wang Young Jin Choi Beom Soo Park Gaku Furuta Soo Young Choi Robin Tiner Suhail Anwar Shinichi Kurita

作者单位: AKT Display CVD, Applied Materials 3101 Scott Boulevard, M/S 9106 PO Box 58039 Santa Clara, CA 95054

会议类型: 国际会议

会议名称: China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)

会议地点: 江苏昆山

会议语种:英文

页码: 56-57

在线出版日期: 2011-11-07（万方平台首次上网日期，不代表论文的发表时间）