Microcrystalline Silicon, a Right Material for Reliable Electronic Devices Fabricated at T<180°C

摘要：

Microcrystalline silicon deposited at low temperature is shown to be a right material for the implementation of a low temperature technology leading to reliable and efficient CMOS electronic devices on any low temperature substrate such as transparent plastics. The technology is fully compatible with the present amorphous silicon technology tools. Efficient N-type and P-type doping is reached thanks to the excellent crystallinity of the silicon material deposited at 165°C. N-type and P-type TFTs are fabricated with demonstrated reliability and stability. Their threshold voltage can be externally adjusted. The association of these TFTs led to CMOS inverters with excellent pairing and ring oscillators.

关键词： low temperature technology transparent plastic substrate CMOS technology

作者: T. Mohammed-Brahim

作者单位: Institut dElectronique et de Telecommunications de Rennes (IETR),UMR-CNRS 6164, Universite de Rennes I, 35042 Rennes Cedex France

会议类型: 国际会议

会议名称: China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)

会议地点: 江苏昆山

会议语种:英文

页码: 58-61

在线出版日期: 2011-11-07（万方平台首次上网日期，不代表论文的发表时间）