Degradation Mechanisms of Low Temperature Poly-Si Thin-Film Transistors under Circuit Applications

摘要：

Device reliability of low temperature poly-Si (LTPS) thin-film transistors (TFTs) under circuit application is a key issue to be addressed for integration of TFT-based driver circuits. In this paper, degradation mechanisms of LTPS TFTs under various electrical biases are reviewed, including both DC and AC conditions. For n-type TFTs under DC stresses, either hot carrier (HC) or self-heating (SH) can be the controlling degradation mechanism. While for p-type TFTs biased in the ON or OFF-state, negative or positive bias temperature instability (NBTI or PBTI) dominates the device degradation. Under AC operation by Vg switching only, dynamic HC effect is the controlling degradation mechanism for n-type TFTs, while both NBTI and the dynamic HC mechanisms are effective for p-type TFTs. Under AC operation by Vd switching only, another dynamic HC mechanism due to non-equilibrium drain junction causes HC degradation in both n- and p- type TFTs. Under AC operation by synchronized Vg and Vd switching, device degradation is dominated by SH at low-frequencies whereas by dynamic HC at highfrequencies in n-type TFTs.

关键词： low temperature poly-Si (LTPS) thin-film transistor (TFT) hot carrier (HC) self-heating (SH) negative bias temperature instability (NBTI) positive bias temperature instability (PBTI) AC stress

作者: Mingxiang Wang Xiaowei Lu Huaisheng Wang Meng Zhang Chunfeng Hu jie Zhou Min Xue Man Wong

作者单位: Dept. of Microelectronics, Soochow University, Suzhou, China Dept. of Electronic Information, Nanjing Institute of Railway Technology, Suzhou, China Dept. of Electronic and Computer Engineering, the Hong Kong University of Science and Technology,Kow

会议类型: 国际会议

会议名称: China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)

会议地点: 江苏昆山

会议语种:英文

页码: 62-65

在线出版日期: 2011-11-07（万方平台首次上网日期，不代表论文的发表时间）