1/f Noise Characterization of Metal-Induced Crystallized Poly-Si Thin-Film Transistors
Low-frequency noise (LFN) is systematically investigated for n- and p-type metal-induced crystallized poly-Si thin-film transistors (TFTs) fabricated by either low or high temperature process, and biased from weak to strong inversion. 1/f dependent LFN characteristic is observed. The normalized drain current spectral density Si/Id2 shows that the carrier number fluctuation is the dominant mechanism. For n-type TFTs, the current noise in low temperature (LT) devices is about one order of magnitude higher than that in high temperature (HT) devices, whereas that of p-type TFTs is in the same order of magnitude for both LT and HT devices. Based on the carrier number with correlated mobility fluctuation model, the trap density (Nt) and the Coulomb scattering parameter are obtained. Nt values in LT TFTs are 1.5×1020 and 5.1×1019 eV‐1.cm‐3 respectively for n- and p-types. In comparison, for HT TFTs Nt are l.0×1018 and 3.2×l018 eV‐1cm‐3 for n- and p-types. The difference is attributed to the better interface and active layer quality in HT devices, indicating that LFN is effective in poly-Si TFTs characterization.
Noise metal-induced crystallized poly-Si thin-film transistors (TFTs)
Yang Shao Mingxiang WANG Xiaowei Lu Xiaohong Sun
Dept. of Microelectronics, Soochow University, Suzhou, 215006, China
国际会议
China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)
江苏昆山
英文
66-68
2011-11-07（万方平台首次上网日期，不代表论文的发表时间）