P-channel Bridged-grain (BG) Excimer Laser Annealing (ELA) poly-Si TFTs with various BG implantation dosages

摘要：

A new technique bridged-grain (BG) is proposed. Using this BG excimer laser annealing (ELA) poly-Si as the active layer, the grain boundary effects can be reduced. With the optimized implantation dosage, important electrical properties such as sub-threshold swing, threshold voltage, on-state current, leakage current, on-off ratio and device uniformity across the substrate can all be improved using the present technique. The improvement can be achieved at low cost, thus making inexpensive, high performance LTPS TFT a reality.

关键词： bridged-grain excimer laser annealing (ELA) poly-Si thin film transistors

作者: S. Y. Zhao Z. G. Meng W. Zhou M. Wong H. S. Kwok

作者单位: Center for Display Research and Department of Electrical and Electronic Engineering The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong,China

会议类型: 国际会议

会议名称: China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)

会议地点: 江苏昆山

会议语种:英文

页码: 78-80

在线出版日期: 2011-11-07（万方平台首次上网日期，不代表论文的发表时间）