TFT Backplane Based on Amorphous Oxide Semiconductor

摘要：

TFTs based on indium-gallium-zinc oxide semiconductor was fabricated using anodized aluminum oxide (Al2O3) as gate dielectric layer and spin-coated photo-resist (PR) as passivation layer. The source/drain electrodes were patterned by lift-off process. The highest temperature was only 230 °C, and dry etch was not used during the whole process. The TFT device showed an electron mobility of as high as 18 cmV‐1s‐1, a on/off current ratio of 107, and a threshold voltage of 0.0 V. TFT backplane was designed and fabricated. And a 50×50-pixel-AMOLED driven by this kind of TFT was demonstrated.

关键词： Thin-film transistor oxide semiconductor AMOLED

作者: L. F. Lan S.H.Bai C.F.Wang R.X.Xu J.B.Peng M.Xu J.H.Zou H.Tao L.Wang M. Li H. Xu D.X.Luo S.F.Yu

作者单位: Institute of Polymer Optoelectronic Material and Devices, Guangzhou, 510640 China State Key Laboratory of Luminescent Materials and Devices (South China University of Technology) New Vision Opto-ELectronic Technology Co, Ltd, Guangzhou 510640, China

会议类型: 国际会议

会议名称: China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)

会议地点: 江苏昆山

会议语种:英文

页码: 201-203

在线出版日期: 2011-11-07（万方平台首次上网日期，不代表论文的发表时间）