High Power Al-free InGaAsP quantum well Laser Diodes of 808nm wavelength

摘要：

In this paper, we present a high power laser diode of 808nm wavelength with Al-free InGaAsP quantum well. For high power and narrow beam divergence, an asymmetry broad waveguide structure was used. The epilayers were grown by LP-MOCVD. We have obtained a maximum optical power of 11.6W at 10A and the vertical far field angle of 29°. After lifetime tested, Al-free InGaAsP quantum well laser diodes showed good reliability.

关键词： asymmetry broad waveguide InGaAsP Al-free quantum well LP- MOCVD

作者: Yang Lu Qingyang Xu Liang Ma Yi Gan Chang-qing Xu

作者单位: C2C Link Corporation CQ Laser Technologies Co, Ltd McMaster University C2C Link Corporation CQ Laser Technologies Co, Ltd McMaster University

会议类型: 国际会议

会议名称: China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)

会议地点: 江苏昆山

会议语种:英文

页码: 217-220

在线出版日期: 2011-11-07（万方平台首次上网日期，不代表论文的发表时间）