Characterization of Capacitive Touch Sensor Structures by Device/Circuit Mixed-mode Simulations
In this work, a device/circuit mixed-mode simulation method is proposed to effectively characterize the physical effects of the structure parameters on the sensing performance of capacitive type touch sensor devices for their optimal design in touch screen applications. The electrostatic characteristics of the intrinsic capacitive sensor structure were obtained by numerical device simulations, and then embedded into the circuit simulation environment to predict the resulted sensing performance. A singlelayer capacitive sensor structure was taken as an example in the study. The related physical mechanisms during the touching procedure were analyzed with the simulation method, which was in agreement with the experimental measurement results.
touch screen capacitive touch mixed-mode simulation
R. Liu Z. Hou X. Xu L. Feng X. Guo Y. Chen
Department of Electronic Engineering, Shanghai Jiao Tong University Shanghai, 200240, China Tianma Microelectronics, 889 Huiqing Road, Pudong New District Shanghai, 200120, China
国际会议
China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)
江苏昆山
英文
321-324
2011-11-07（万方平台首次上网日期，不代表论文的发表时间）