Influence of Deep States in Active Layers on the Performance of Amorphous In-Ga-Zn-O Thin Film Transistors
In this paper, a theoretical model of a-IGZO TFTs is established, and effects of deep donor-like states originated from oxygen vacancies are studied by computer simulations. The simulation results show that the deep states affect off-state current while have negligible effect on on-state current. Conducting mechanism under negative gate bias is studied. With different contact properties between aIGZO thin films and source/drain electrodes, the offstate conduction mechanism in a-IGZO TFTs can be either electron-dominant or hole-dominant conduction, which accordingly lead to different properties of the dependence of device performance on the deep donorlike states.
Thin Film Transistors Amorphous Oxide Semiconductors Density of States Deep States
Junfei Shi Chengyuan Dong Yikai Su
Center for Opto-electronic Materials and Devices, National Engineering Lab of TFT-LCD Materials and Technologies, Shanghai Jiao Tong University, Shanghai 200240, China
国际会议
China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)
江苏昆山
英文
356-359
2011-11-07（万方平台首次上网日期，不代表论文的发表时间）