Data Signal Induced Feed-through Effects in Integrated a-Si:H Gate Driver
The data signal induced feed-through effects on dynamic performances of a-Si:H gate driver have been investigated in this paper. Simulation results show that for the dot inversion driving mode, the low level of the output voltage is raised distinctively due to the data signal fluctuations. It is thus suggested that feed-through effects induced by data signals cant be ignored, especially for taking VT shift into consideration. Although using large pulldown TFTs can suppress the feed-through effects, the power consumption increases too much. Optimization design of the circuit was studied to realize an aSi:H gate driver with stable output voltage, low power consumption and long lifetime in this work.
a-Si gate driver feed-through effect dynamic performance VT shift
Congwei Liao Tao Chen Xiaoming Liu Shengdong Zhang David Dai Smart Chung T. S. Jen
Shenzhen Graduate School, Peking University, Shenzhen 518055, PRC Shenzhen Graduate School, Peking University, Shenzhen 518055,PRC Jiangsu (IVO) FPD Technology & Research,Info Vision Optoelectronics (Kunshan) Co, Ltd, Kunshan 21530
国际会议
China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)
江苏昆山
英文
389-392
2011-11-07（万方平台首次上网日期，不代表论文的发表时间）