High Performance RF Sputtering Deposited ZnO Thin-Film Transistors
In this paper, the construction and characteristics of bottom-gate thin-film transistors (TFTs) that use ZnO as the active channel layer were investigated. The as-deposited ZnO film was sputtered under oxygen rich ambience with a metallic Zinc target at room temperature. TFT characteristics measurement shows that the TFTs work in the enhancement mode. The major performance parameters of the TFTs with SiN gate insulator include a field effect mobility of 3.5 cm2/ (Vs), an on-off current ratio more than 1×107 and a threshold voltage of 6.2V.
thin-film transistors ZnO film Zinc target reactive RF sputtering
Shao-Juan Li Dedong Han Lei Sun Yi Wang Ru-Qi Han Shengdong Zhang
Institute of Microelectronics, Peking University, Beijing 100871, PRC Shenzhen Graduate School, Peking University, Shenzhen 518055, PRC
国际会议
China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)
江苏昆山
英文
393-396
2011-11-07（万方平台首次上网日期，不代表论文的发表时间）