Low-temperature materials and thin film transistors for flexible electronics

摘要：

The paper reviews the material requirements of nanocrystalline silicon (nc-Si) in terms of thin film transistors (TFTs) and configuration for display application. We studied the material qualities of nc-Si films deposited by 13.56 MHz plasma-enhanced chemical vapor deposition (PECVD) from a conventional H2 dilution in SiH4 at low temperature. Some types of intrinsic nc-Si films deposited at the high pressure and the low pressure were studied. A further improvement in the nc-Si:H film structure and properties is obtained by adjusting the r.f. power and the deposition temperature. The material properties were characterized with Raman spectroscopy measurements to reveal 76％ of crystalline volume fraction. The nc-Si crystalline were mainly determined by the ratio of H and SiH3l-3. The nc-Si with optimized deposition condition was used as the channel layers of TFTs to investigate the effect of nc-Si qualities for the TFTs application.

关键词： nanocrystalline silicon thin film transistors low-temperature

作者: Y.L. Li X. He X. Lin B.B Jiang S.J. Li S.D. Zhang

作者单位: School of ShenZhen Graduate, Peking University, Shenzhen, PRC 518055 School of Electronics Engineering and Computer Science, Peking University, Beijing, PRC 100871

会议类型: 国际会议

会议名称: China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)

会议地点: 江苏昆山

会议语种:英文

页码: 397-400

在线出版日期: 2011-11-07（万方平台首次上网日期，不代表论文的发表时间）