Moisture Related Instability in p-Type Low Temperature Polycrystalline Silicon Thin Film transistors

摘要：

The unreliable behaviors of low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) after a period of storage are confirmed to be related to the moisture by the observation of enhanced negative bias temperature instability (NBTI) after humidity treatments and the observation of decreased NBTI degradation after hard bake treatment. PECVD passivation layers of combined SiO2 and Si3N4 deposited on the top of low temperature LTPS TFT structure can effectively prevent the moisture from penetrating into the TFT structure and improve the device reliability.

关键词： low temperature polycrystalline silicon thin film transistors moisture related instability passivation layer

作者: Meng ZHANG Wei ZHOU Shuyun ZHAO Hoi Sing KWOK

作者单位: Center for Display Research and Department of Electronic and Computer Engineerin The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China

会议类型: 国际会议

会议名称: China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)

会议地点: 江苏昆山

会议语种:英文

页码: 427-430

在线出版日期: 2011-11-07（万方平台首次上网日期，不代表论文的发表时间）