Influence of thermal annealing on the electrical characteristics of doped zinc oxide thin film transistors
Thin film transistors with zinc oxide doped by indium and gallium (IGZO) as the semiconductor layer were investigated. Two type transistors were prepared by different conditions. The first was annealing IGZO film before depositing Ni source-drain electrode (Device A); the second was annealing IGZO film after depositing Ni source-drain electrodes (Device B). It is found that Device A shows better performances with a field-effect mobility of 2.8cm2/Vs, a current on/off ratio of 106, and a threshold voltage of about 10V. However, Device B shows poor electric performances with a field-effect mobility of 0.3cm2/Vs, a current on/off ratio of 104, and a threshold voltage of about 30V.
IGZO thermal annealing thin film transistor
R. X. Xu L. F. Lan J. B. Peng
Institute of Polymer Optoelectronic Material and Devices, Guangzhou, 510640 China State Key Laboratory of Luminescent Materials and Devices
国际会议
China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)
江苏昆山
英文
524-527
2011-11-07（万方平台首次上网日期，不代表论文的发表时间）