Low Temperature Organic Thin-Film Transistor Based on Tantalum Pentoxide Prepared by Anodization

摘要：

Organic thin-film transistors (OTFTs) based on pentacene active layer and anodized Ta2O5 gate dielectric layer was fabricated. A hole mobility of as high as 0.91 cmV‐1s‐1 with a threshold voltage of only -6 V was obtained.

关键词： Thin-film transistor organic AMOLED

作者: L. F. Lan S.H.Bai C.F.Wang R.X.Xu J.B.Peng M.Xu J.H.Zou H.Tao L.Wang M. Li H. Xu D.X.Luo S.F.Yu

作者单位: Institute of Polymer Optoelectronic Material and Devices, Guangzhou, 510640 China State Key Laborato Institute of Polymer Optoelectronic Material and Devices, Guangzhou, 510640 China State Key Laborato

会议类型: 国际会议

会议名称: China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)

会议地点: 江苏昆山

会议语种:英文

页码: 528-529

在线出版日期: 2011-11-07（万方平台首次上网日期，不代表论文的发表时间）