The Source/Drain Resistance of a-IGZO TFT
Conventional bottom gate top contact (BGTC) amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) were fabricated on glass substrate by RF magnetron sputtering. The fabricated TFT exhibits a threshold voltage of ~4 V, drain-source current on/off ratio of ~3.6×107, subthreshold voltage swing of 0.65 V/dec, and a field effect mobility of 4.7 cm2/Vs extracted from trans-conductance in linear region. In this paper, we mainly investigated the dependence of the source drain series resistance (Rsd) and channel resistance on gate voltage in a-IGZO TFT. As the gate voltage inceases, both Rch and Rsd decrease, which is thought to be related to the accumulation of electrons in the channel and under the overlap region between source/drain and gate. We also find that, as channel length L decreases, the proportion of Rsd in Rtot increases, which results in the decrease of field effect mobility of about 43％ for L decreases from 50 μm to 1 μm.
amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) source drain series resistance (Rsd) channel resistance per unit length (Rch)
X. He S. J. Li X. Lin B. B. Jiang Y. L. Li S. D. Zhang
School of Electronics Engineering and Computer Science, Peking University Beijing, P.R Xhina 100871 School of Electronics Engineering and Computer Science, Peking University Beijing, P.RXhina 100871
国际会议
China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)
江苏昆山
英文
540-542
2011-11-07（万方平台首次上网日期，不代表论文的发表时间）