Electrical Responses of Microcrystalline Silicon TFTs to Mechanical Stresses
N-type microcrystalline silicon top-gate TFTs, processed directly on PEN plastic substrate at maximum temperature of 180°C, are mechanically stressed. Tensile and compressive strains were applied by bending TFTs with different curvature radius varying between infinite (flat) and 0.5 cm. Electron mobility increases with tensile strain and decreases with compressive one. This behaviour is shown to be due mainly to the variation of silicon properties. TFTs work still a radius of 1 cm and fail after. Failure occurs mainly from silicon nitride that is used as encapsulation layer of the substrate and as gate insulator.
μc-Si TFT PEN Electrical and Mechanical Stress
S. Janfaoui K. Kandoussi C. Simon N. Coulon S. Crand T. Mohammed-Brahim
Institute of Electronics and Telecommunications of Rennes, Microelectronics Group, University of Ren Institute of Electronics and Telecommunications of Rennes, Microelectronics Group, University of Ren
国际会议
China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)
江苏昆山
英文
543-548
2011-11-07（万方平台首次上网日期，不代表论文的发表时间）