Structural, Electrical and Optical Properties of Zn1-xMgxO Films Prepared by Reactive DC Sputtering
Zn1-xMgxO thin films were prepared by reactive DC sputtering with Zn&Mg insetting target and ZnMg alloying target respectively for the first time. We compared the properties of Zn1-xMgxO thin films fabricated from the two targets. We studied the effect of oxygen content and postannealing on the properties of Zn1-xMgxO films. XRD, AFM, and spectrophotometer were used to measure the properties of Zn1-xMgxO films. From XRD patterns, we observed two diffraction peaks at around 34 °and 36 °corresponding to (0002) orientation of Zn1-xMgxO. Zn1-xMgxO films fabricated in our experiment were ZnO hexagonal structure, and Zn1-xMgxO films grown from ZnMg alloying target showed better preference to C axis, with larger grain size and rougher surface. Energy band gap (Eg) under different O2 content is 3.94 eV, 3.76 eV and 3.63 eV respectively. The process of annealing at 300 °C for lh helped the grain recrystallization, thus the grain size and the surface roughness increased as a result of this.
Zn1-xMgxO films reactive DC sputtering Zn&Mg insetting target optical transparent
B.B. Jiang X. Lin S.J. Li X. He Y.L. Li S.D. Zhang
School of Shenzhen graduate, Peking University, Shenzhen, PRC 518055 School of Information Technolog School of Shenzhen graduate, Peking University, Shenzhen, PRC 518055 School of Information Technolog
国际会议
China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)
江苏昆山
英文
556-559
2011-11-07（万方平台首次上网日期，不代表论文的发表时间）